標題: Superpolishing for planarizing copper damascene interconnects
作者: Chang, SC
Shieh, JM
Dai, BT
Feng, MS
Li, YH
Shih, CH
Tsai, MH
Shue, SL
Liang, RS
Wang, YL
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-May-2003
摘要: We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1565853
http://hdl.handle.net/11536/27881
ISSN: 1099-0062
DOI: 10.1149/1.1565853
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 6
Issue: 5
起始頁: G72
結束頁: G74
Appears in Collections:Articles