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dc.contributor.authorHuang, HCen_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:40:57Z-
dc.date.available2014-12-08T15:40:57Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0026-2692en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0026-2692(03)00097-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/27905-
dc.description.abstractWe present a theoretical study of the spin-dependent electron scattering from screened impurities in Ill-V semiconductor quantum wells. The effective one band Hamiltonian and the Rashba spin-orbit interaction are used. We calculated the Mott scattering cross-section and the Sherman function for two-dimensional electrons spin-polarized parallel to the z-axis (direction of structure growth). We have found a large spin-dependent asymmetry in the elastic cross-section for electrons scattered from impurities in CdTe/InSb/CdTe symmetrical semiconductor quantum wells. The Sherman function amplitude for repulsive impurities in CdTe/InSb/CdTe quantum wells is predicted to be about 0.01. (C) 2003 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectquantum wellsen_US
dc.subjectSherman functionen_US
dc.subjectspin-polarizeden_US
dc.titleRole of the spin-orbit interaction in elastic scattering of electrons in quantum wellsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0026-2692(03)00097-1en_US
dc.identifier.journalMICROELECTRONICS JOURNALen_US
dc.citation.volume34en_US
dc.citation.issue5-8en_US
dc.citation.spage687en_US
dc.citation.epage690en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000183607400087-
Appears in Collections:Conferences Paper


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