Role of the spin-orbit interaction in elastic scattering of electrons in quantum wells

doi:10.1016/S0026-2692(03)00097-1

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DC 欄位	值	語言
dc.contributor.author	Huang, HC	en_US
dc.contributor.author	Voskoboynikov, O	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:40:57Z	-
dc.date.available	2014-12-08T15:40:57Z	-
dc.date.issued	2003-05-01	en_US
dc.identifier.issn	0026-2692	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0026-2692(03)00097-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27905	-
dc.description.abstract	We present a theoretical study of the spin-dependent electron scattering from screened impurities in Ill-V semiconductor quantum wells. The effective one band Hamiltonian and the Rashba spin-orbit interaction are used. We calculated the Mott scattering cross-section and the Sherman function for two-dimensional electrons spin-polarized parallel to the z-axis (direction of structure growth). We have found a large spin-dependent asymmetry in the elastic cross-section for electrons scattered from impurities in CdTe/InSb/CdTe symmetrical semiconductor quantum wells. The Sherman function amplitude for repulsive impurities in CdTe/InSb/CdTe quantum wells is predicted to be about 0.01. (C) 2003 Elsevier Science Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	quantum wells	en_US
dc.subject	Sherman function	en_US
dc.subject	spin-polarized	en_US
dc.title	Role of the spin-orbit interaction in elastic scattering of electrons in quantum wells	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0026-2692(03)00097-1	en_US
dc.identifier.journal	MICROELECTRONICS JOURNAL	en_US
dc.citation.volume	34	en_US
dc.citation.issue	5-8	en_US
dc.citation.spage	687	en_US
dc.citation.epage	690	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000183607400087	-
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