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dc.contributor.authorChen, CFen_US
dc.contributor.authorTsai, CLen_US
dc.date.accessioned2014-12-08T15:41:00Z-
dc.date.available2014-12-08T15:41:00Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://hdl.handle.net/11536/27933-
dc.description.abstractField emission display (FED) is evolving as a promising technique of flat panel displays in the future. In this paper, various carbon based nanostructures are acted as cathode materials for field emission devices. Dendrite-like diamond-like carbon emitters, carbon nanotubes, carbon nanotips are synthesized by microwave plasma chemical vapor deposition. Many factors affect the performance of field emitters, such as the shape, work function and aspect ratio of emission materials. Modified process of carbon based nano-materials for enhancing field emission efficiency are included intrinsic and extrinsic process. These reformations contain the p-type and n-type doping, carburization and new ultra well-aligned carbon nano-materials. It is found that carbon nano-materials grown on micropatterned diode show higher efficiency of FED. In addition, to achieve a low- turn-on field, the novel scheme involving a new fabrication process of gated structure metal-insulator-semiconductor (MIS) diode by IC technology is also presented.en_US
dc.language.isoen_USen_US
dc.subjectdiamond-like carbon emittersen_US
dc.subjectn-type dopingen_US
dc.subjectcarbon nanotubesen_US
dc.subjectbias effecten_US
dc.subjectwell-aligned carbon nanotips and field emissionen_US
dc.titleModification of new carbon based nano-materials for field emission devicesen_US
dc.typeArticleen_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE86Cen_US
dc.citation.issue5en_US
dc.citation.spage803en_US
dc.citation.epage810en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000183075500020-
dc.citation.woscount0-
Appears in Collections:Articles