標題: | Field emission from well-aligned carbon nanotips grown in a gated device structure |
作者: | Tsai, CL Chen, CF Lin, CL 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 11-三月-2002 |
摘要: | Vertically well-aligned, high-aspect-ratio carbon nanotips have been directly grown upward on the gated device structure with 4 mum gate aperture. The nanotips rapidly nucleate and grow without any catalyst. In addition, selected area deposition of nanotips is achieved by using a Pt layer as inhibitor in the bias-assisted microwave plasma chemical vapor deposition. The field emission current of nanotips on the gated structure is 154 muA (at a gate-to-cathode voltage of V-gc=50 V). This results from the following reasons: (i) short gate-tips spacing, (ii) small gate aperture, and (iii) the high-aspect ratio of nanotips. (C) 2002 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1459109 http://hdl.handle.net/11536/28941 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1459109 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 80 |
Issue: | 10 |
起始頁: | 1821 |
結束頁: | 1822 |
顯示於類別: | 期刊論文 |