標題: Field emission from well-aligned carbon nanotips grown in a gated device structure
作者: Tsai, CL
Chen, CF
Lin, CL
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 11-Mar-2002
摘要: Vertically well-aligned, high-aspect-ratio carbon nanotips have been directly grown upward on the gated device structure with 4 mum gate aperture. The nanotips rapidly nucleate and grow without any catalyst. In addition, selected area deposition of nanotips is achieved by using a Pt layer as inhibitor in the bias-assisted microwave plasma chemical vapor deposition. The field emission current of nanotips on the gated structure is 154 muA (at a gate-to-cathode voltage of V-gc=50 V). This results from the following reasons: (i) short gate-tips spacing, (ii) small gate aperture, and (iii) the high-aspect ratio of nanotips. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1459109
http://hdl.handle.net/11536/28941
ISSN: 0003-6951
DOI: 10.1063/1.1459109
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 10
起始頁: 1821
結束頁: 1822
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