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dc.contributor.authorShye, DCen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorKuo, MWen_US
dc.contributor.authorChen, JSen_US
dc.contributor.authorChou, BCSen_US
dc.contributor.authorJan, CKen_US
dc.contributor.authorWu, MFen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:41:07Z-
dc.date.available2014-12-08T15:41:07Z-
dc.date.issued2003-04-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1553937en_US
dc.identifier.urihttp://hdl.handle.net/11536/27975-
dc.description.abstractThe temperature coefficient of resistance (TCR) characteristics of Pt/(Ba0.8Sr0.2)TiO3 (BST)/Pt thin-film resistors are studied for the BST films with rapid thermal annealing (RTA) treatments. The polarizations induced by bias voltages greatly influence the TCR characteristics. The RTA-treated BST thin film exhibits negative TCR (NTCR) behavior at a negative voltage, but, intriguingly, positive TCR (PTCR) behavior at a positive voltage. According to the leakage current analysis, Schottky emission dominates the negatively biased current at the upper interface, but Heywang barrier scattering confines the positive biased current. (C) 2003 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleDependence of polarization on temperature coefficient resistance of (Ba, Sr)TiO3 thin films post-treated by RTAen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1553937en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume6en_US
dc.citation.issue4en_US
dc.citation.spageG55en_US
dc.citation.epageG58en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000181148900014-
dc.citation.woscount9-
顯示於類別：期刊論文


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