THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas

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DC 欄位	值	語言
dc.contributor.author	Liu, TA	en_US
dc.contributor.author	Tani, M	en_US
dc.contributor.author	Pan, CL	en_US
dc.date.accessioned	2014-12-08T15:41:13Z	-
dc.date.available	2014-12-08T15:41:13Z	-
dc.date.issued	2003-03-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1541105	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28037	-
dc.description.abstract	We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1541105	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	93	en_US
dc.citation.issue	5	en_US
dc.citation.spage	2996	en_US
dc.citation.epage	3001	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000181307000109	-
dc.citation.woscount	41	-
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