完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, CS | en_US |
dc.contributor.author | Duh, JG | en_US |
dc.contributor.author | Chen, YM | en_US |
dc.contributor.author | Wang, JH | en_US |
dc.date.accessioned | 2014-12-08T15:41:20Z | - |
dc.date.available | 2014-12-08T15:41:20Z | - |
dc.date.issued | 2003-02-01 | en_US |
dc.identifier.issn | 0361-5235 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28122 | - |
dc.description.abstract | Flip-chip interconnection technology plays a key role in today's electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni1-x,Cu-x)(3)Sn-4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni1-xCux)(3)Sn-4 was next to the Ni/Cu UBM. The islandlike (Cu1-y,Ni-y)(6)Sn-5 was formed between (Ni,Cu)(3)Sn-4 and solders. The amounts of (Cu1-y,Ni-y)(6)Sn-5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | flip chip | en_US |
dc.subject | under-bump metallization | en_US |
dc.subject | intermetallic compound | en_US |
dc.subject | diffusion | en_US |
dc.subject | phase transformation | en_US |
dc.title | Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
dc.citation.volume | 32 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 89 | en_US |
dc.citation.epage | 94 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000180869100007 | - |
dc.citation.woscount | 21 | - |
顯示於類別: | 期刊論文 |