Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | TSANG, JS | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.contributor.author | LIU, DC | en_US |
dc.contributor.author | CHEN, HR | en_US |
dc.contributor.author | TSAI, KL | en_US |
dc.contributor.author | TSAI, CM | en_US |
dc.date.accessioned | 2014-12-08T15:04:18Z | - |
dc.date.available | 2014-12-08T15:04:18Z | - |
dc.date.issued | 1993-10-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.354319 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2814 | - |
dc.description.abstract | The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers. | en_US |
dc.language.iso | en_US | en_US |
dc.title | INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.354319 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 74 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 4882 | en_US |
dc.citation.epage | 4885 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1993MC03000011 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |