標題: INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERS
作者: TSANG, JS
LEE, CP
LIU, DC
CHEN, HR
TSAI, KL
TSAI, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Oct-1993
摘要: The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.
URI: http://dx.doi.org/10.1063/1.354319
http://hdl.handle.net/11536/2814
ISSN: 0021-8979
DOI: 10.1063/1.354319
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 74
Issue: 8
起始頁: 4882
結束頁: 4885
Appears in Collections:Articles