完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, E | en_US |
dc.contributor.author | Voskoboynikov, O | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:41:23Z | - |
dc.date.available | 2014-12-08T15:41:23Z | - |
dc.date.issued | 2003-02-01 | en_US |
dc.identifier.issn | 0038-1098 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1098(02)00850-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28150 | - |
dc.description.abstract | We present a theoretical study of the spin-dependent electron scattering froth spherical quantum dots (antidots) embedded into III-V semiconductors. To calculate the elastic scattering cross-section we use the effective one electron band Hamiltonian and spin-dependent boundary conditions generated by the spin-orbit interaction in the structures. It is demonstrated that the spin-orbit interaction can lead to a recognizable magnitude of polarization for single and double scattering at zero magnetic field. (C) 2003 Elsevier Science Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nanostructures | en_US |
dc.subject | semiconductors | en_US |
dc.subject | electronic transport | en_US |
dc.subject | spin-orbit effects | en_US |
dc.title | Spin-dependent electron single and double scattering from quantum dots and antidots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/S0038-1098(02)00850-5 | en_US |
dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
dc.citation.volume | 125 | en_US |
dc.citation.issue | 7-8 | en_US |
dc.citation.spage | 381 | en_US |
dc.citation.epage | 385 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000181023700006 | - |
dc.citation.woscount | 4 | - |
顯示於類別: | 期刊論文 |