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dc.contributor.authorChen, Een_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:41:23Z-
dc.date.available2014-12-08T15:41:23Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1098(02)00850-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/28150-
dc.description.abstractWe present a theoretical study of the spin-dependent electron scattering froth spherical quantum dots (antidots) embedded into III-V semiconductors. To calculate the elastic scattering cross-section we use the effective one electron band Hamiltonian and spin-dependent boundary conditions generated by the spin-orbit interaction in the structures. It is demonstrated that the spin-orbit interaction can lead to a recognizable magnitude of polarization for single and double scattering at zero magnetic field. (C) 2003 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanostructuresen_US
dc.subjectsemiconductorsen_US
dc.subjectelectronic transporten_US
dc.subjectspin-orbit effectsen_US
dc.titleSpin-dependent electron single and double scattering from quantum dots and antidotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1098(02)00850-5en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume125en_US
dc.citation.issue7-8en_US
dc.citation.spage381en_US
dc.citation.epage385en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000181023700006-
dc.citation.woscount4-
Appears in Collections:Articles


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