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dc.contributor.authorLin, LCen_US
dc.contributor.authorMeng, HFen_US
dc.contributor.authorShy, JTen_US
dc.contributor.authorHorng, SFen_US
dc.contributor.authorYu, LSen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorLiaw, HHen_US
dc.contributor.authorHuang, CCen_US
dc.contributor.authorPeng, KYen_US
dc.contributor.authorChen, SAen_US
dc.date.accessioned2019-04-03T06:38:04Z-
dc.date.available2019-04-03T06:38:04Z-
dc.date.issued2003-01-24en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.90.036601en_US
dc.identifier.urihttp://hdl.handle.net/11536/28155-
dc.description.abstractThe triplet to singlet exciton formation ratio in a MEH-PPV light-emitting diode is measured by comparing the triplet-induced absorptions with optical and electric excitations at the same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-independent value 3 at intermediate field but is reduced to about 2 for higher field.en_US
dc.language.isoen_USen_US
dc.titleTriplet-to-singlet exciton formation in poly(p-phenylene-vinylene) light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.90.036601en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000180579200041en_US
dc.citation.woscount44en_US
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