CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, HR	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	TSAI, KL	en_US
dc.contributor.author	TSANG, JS	en_US
dc.date.accessioned	2014-12-08T15:04:19Z	-
dc.date.available	2014-12-08T15:04:19Z	-
dc.date.issued	1993-10-14	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2820	-
dc.description.abstract	The current gain of an AlAs/GaS tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 angstrom and fall off for barrier thickness increasing from 200 to 500 angstrom. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.	en_US
dc.language.iso	en_US	en_US
dc.subject	SEMICONDUCTOR DEVICES	en_US
dc.subject	HETEROJUNCTION BIPOLAR TRANSISTORS	en_US
dc.subject	TUNNELING STRUCTURES	en_US
dc.title	CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	21	en_US
dc.citation.spage	1883	en_US
dc.citation.epage	1884	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993NE96700051	-
dc.citation.woscount	3	-
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