完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, Chih-Yi | en_US |
dc.contributor.author | Lee, Tse-Hsien | en_US |
dc.contributor.author | Chen, Huang-Ming Philip | en_US |
dc.contributor.author | Kuo, Hui-Chien J. | en_US |
dc.contributor.author | Chen, Yi-Fan | en_US |
dc.contributor.author | Lee, Chin-Yang | en_US |
dc.contributor.author | Lin, Yin-Chang | en_US |
dc.contributor.author | Hsu, Yao-Jane | en_US |
dc.date.accessioned | 2014-12-08T15:41:35Z | - |
dc.date.available | 2014-12-08T15:41:35Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28275 | - |
dc.description.abstract | The oxygen plasma post-treatment was adopted for alignment preparation in Ar plasma alignment process. The light leakage at the dark slate was suppressed by the new treatment. The NEXAFS data suggested that the out of plane carbonyl groups have been regenerated under oxygen plasma post-treatment. The polar anchoring energy was two times increased comparing to the Ar treated PI. The cell's EO properties by new plasma treatment were comparable to the rubbed PI surface. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Anchoring Energy Enhancement for Plasma Alignment Technology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | en_US |
dc.citation.spage | 1634 | en_US |
dc.citation.epage | 1636 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000272997600422 | - |
顯示於類別: | 會議論文 |