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dc.contributor.authorHsu, Chih-Yien_US
dc.contributor.authorLee, Tse-Hsienen_US
dc.contributor.authorChen, Huang-Ming Philipen_US
dc.contributor.authorKuo, Hui-Chien J.en_US
dc.contributor.authorChen, Yi-Fanen_US
dc.contributor.authorLee, Chin-Yangen_US
dc.contributor.authorLin, Yin-Changen_US
dc.contributor.authorHsu, Yao-Janeen_US
dc.date.accessioned2014-12-08T15:41:35Z-
dc.date.available2014-12-08T15:41:35Z-
dc.date.issued2009en_US
dc.identifier.urihttp://hdl.handle.net/11536/28275-
dc.description.abstractThe oxygen plasma post-treatment was adopted for alignment preparation in Ar plasma alignment process. The light leakage at the dark slate was suppressed by the new treatment. The NEXAFS data suggested that the out of plane carbonyl groups have been regenerated under oxygen plasma post-treatment. The polar anchoring energy was two times increased comparing to the Ar treated PI. The cell's EO properties by new plasma treatment were comparable to the rubbed PI surface.en_US
dc.language.isoen_USen_US
dc.titleAnchoring Energy Enhancement for Plasma Alignment Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - IIIen_US
dc.citation.spage1634en_US
dc.citation.epage1636en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000272997600422-
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