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dc.contributor.authorChang, FCen_US
dc.contributor.authorShen, KCen_US
dc.contributor.authorChung, HMen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChen, WKen_US
dc.date.accessioned2014-12-08T15:41:39Z-
dc.date.available2014-12-08T15:41:39Z-
dc.date.issued2002-12-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/28336-
dc.description.abstractThe method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 x 10(17) cm(-3) and similar to 1 Omega-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of p-type GaN films doped with isoelectronic indium atomsen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume40en_US
dc.citation.issue6en_US
dc.citation.spage637en_US
dc.citation.epage643en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000179955600009-
dc.citation.woscount5-
Appears in Collections:Articles


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