Characteristics of p-type GaN films doped with isoelectronic indium atoms

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DC 欄位	值	語言
dc.contributor.author	Chang, FC	en_US
dc.contributor.author	Shen, KC	en_US
dc.contributor.author	Chung, HM	en_US
dc.contributor.author	Lee, MC	en_US
dc.contributor.author	Chen, WH	en_US
dc.contributor.author	Chen, WK	en_US
dc.date.accessioned	2014-12-08T15:41:39Z	-
dc.date.available	2014-12-08T15:41:39Z	-
dc.date.issued	2002-12-01	en_US
dc.identifier.issn	0577-9073	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28336	-
dc.description.abstract	The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 x 10(17) cm(-3) and similar to 1 Omega-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of p-type GaN films doped with isoelectronic indium atoms	en_US
dc.type	Article	en_US
dc.identifier.journal	CHINESE JOURNAL OF PHYSICS	en_US
dc.citation.volume	40	en_US
dc.citation.issue	6	en_US
dc.citation.spage	637	en_US
dc.citation.epage	643	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000179955600009	-
dc.citation.woscount	5	-
顯示於類別：	期刊論文

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