Comparison of 1300 nm quantum well lasers using different material systems

標題:	Comparison of 1300 nm quantum well lasers using different material systems
作者:	Lin, G Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	band offset ratio;band structure;material gain;1300-nm band;quaternary material system
公開日期:	1-Dec-2002
摘要:	The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.
URI:	http://dx.doi.org/10.1023/A:1021386822847 http://hdl.handle.net/11536/28340
ISSN:	0306-8919
DOI:	10.1023/A:1021386822847
期刊:	OPTICAL AND QUANTUM ELECTRONICS
Volume:	34
Issue:	12
起始頁:	1191
結束頁:	1200
Appears in Collections:	Articles

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