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dc.contributor.authorHuang, CHen_US
dc.contributor.authorLai, CHen_US
dc.contributor.authorHsieh, JCen_US
dc.contributor.authorLiu, Jen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:41:42Z-
dc.date.available2014-12-08T15:41:42Z-
dc.date.issued2002-12-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2002.805930en_US
dc.identifier.urihttp://hdl.handle.net/11536/28355-
dc.description.abstractWe have studied the gate finger number and gate ength dependence on minimum noise figure (NFmin) in deep submicrometer MOSFETs. A lowest NFmin. of 0.93 dB is measured in 0.18-mum MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 mum shows larger NFmin than the 0.18-mum case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-mum MOSFET gives higher NFmin due to the higher gate resistance and a modified T-gate structure proposed to optimize the NFmin for further scaling down of the MOSFET.en_US
dc.language.isoen_USen_US
dc.subjectMOSFETen_US
dc.subjectnoiseen_US
dc.subjectRFen_US
dc.subjectscaling trenden_US
dc.subject0.13 mu men_US
dc.titleRF noise in 0.18-mu m and 0.13-mu m MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2002.805930en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume12en_US
dc.citation.issue12en_US
dc.citation.spage464en_US
dc.citation.epage466en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180100500001-
dc.citation.woscount13-
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