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dc.contributor.authorWu, CYen_US
dc.contributor.authorCheng, CHen_US
dc.date.accessioned2014-12-08T15:41:42Z-
dc.date.available2014-12-08T15:41:42Z-
dc.date.issued2002-12-01en_US
dc.identifier.issn1057-7122en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2002.805697en_US
dc.identifier.urihttp://hdl.handle.net/11536/28362-
dc.description.abstractIn this paper, a learnable cellular neural network (CNN) with space-variant templates and ratio memory (RM) called the RMCNN, is proposed and analyzed. By incorporating both modified Hebbian learning rule and RM into CNN architecture, the RMCNN as the associative memory can generate the absolute weights and then transform them into the ratioed A-template weights as the ratio memories for recognition of noisy input patterns. It is found from simulation results that due to the feature enhancement effect of RM, the RMCNN under constant leakage on template coefficients can store and recognize more patterns than the CNN associative memories without RM, but with the same learning rule and the same constant leakage on space-variant template coefficients. For 9 x 9 (18 x 18) RMCNNs, three (five) patterns can be learned, stored and recognized. Based upon the RMCNN architecture, an experimental chip of CMOS 9 x 9 RMCNN is designed and fabricated by using 0.35 mum CMOS technology. The measurement results have successfully verified the correct functions of RMCNN.en_US
dc.language.isoen_USen_US
dc.subjectcellular neural network (CNN)en_US
dc.subjectdivideren_US
dc.subjectmultiplieren_US
dc.subjectratio memory (RM)en_US
dc.titleA learnable cellular neural network structure with ratio memory for image processingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2002.805697en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONSen_US
dc.citation.volume49en_US
dc.citation.issue12en_US
dc.citation.spage1713en_US
dc.citation.epage1723en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180273100003-
dc.citation.woscount9-
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