40-GHz coplanar waveguide bandpass filters on silicon substrate

doi:10.1109/LMWC.2002.805535

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chan, KT	en_US
dc.contributor.author	Chen, CY	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Hsieh, JC	en_US
dc.contributor.author	Liu, J	en_US
dc.contributor.author	Duh, TS	en_US
dc.contributor.author	Lin, WJ	en_US
dc.date.accessioned	2014-12-08T15:41:48Z	-
dc.date.available	2014-12-08T15:41:48Z	-
dc.date.issued	2002-11-01	en_US
dc.identifier.issn	1531-1309	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LMWC.2002.805535	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28422	-
dc.description.abstract	We report a very simple process to fabricate high performance filter on Si at 40 GHz; using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz; with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-mum SiO2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at millimeter-wave regime on Si with process compatible to current VLSI technology.	en_US
dc.language.iso	en_US	en_US
dc.title	40-GHz coplanar waveguide bandpass filters on silicon substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LMWC.2002.805535	en_US
dc.identifier.journal	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS	en_US
dc.citation.volume	12	en_US
dc.citation.issue	11	en_US
dc.citation.spage	429	en_US
dc.citation.epage	431	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000179118100004	-
dc.citation.woscount	25	-
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