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dc.contributor.authorLin, WTen_US
dc.contributor.authorChiou, JCen_US
dc.contributor.authorChou, BCSen_US
dc.date.accessioned2014-12-08T15:41:57Z-
dc.date.available2014-12-08T15:41:57Z-
dc.date.issued2002-09-15en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0030-4018(02)01691-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/28520-
dc.description.abstractA photonic device compatible low temperature process that is suitable for fabricating tunable Fabry-Perot filter is proposed in this paper [1]. The advantages of the presented process consist of (1) materials used in this process are compatible with existing optical or IC process; (2) process and detected spectra are not limited by different substrates. Experimental results of the manufactured tunable Fabry-Perot filter indicated that the full-width-half-maximum (FWHM) is closed to 1.3 nm and the measurement of reflectance of distributed Bragg reflectors is up to 99%. Note that within the 10 nm experimental tuning range, the FWHM is kept close to 1.3 nm with tuning voltage from 0 to 30 V. The experimental results showed that the presented process has potential to apply to wavelength division multiplexing (WDM) specifications of optical telecommunication. In particular, the process would also be integrated to fabricate tunable VCSEL processes. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleA photonic device compatible process in fabricating tunable Fabry-Perot filteren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0030-4018(02)01691-7en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume210en_US
dc.citation.issue3-6en_US
dc.citation.spage149en_US
dc.citation.epage154en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000178090800001-
dc.citation.woscount0-
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