Characteristics of deep levels in As-implanted GaN films

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DC Field	Value	Language
dc.contributor.author	Lee, L	en_US
dc.contributor.author	Lee, WC	en_US
dc.contributor.author	Chung, HM	en_US
dc.contributor.author	Lee, MC	en_US
dc.contributor.author	Chen, WH	en_US
dc.contributor.author	Chen, WK	en_US
dc.contributor.author	Lee, HY	en_US
dc.date.accessioned	2014-12-08T15:41:57Z	-
dc.date.available	2014-12-08T15:41:57Z	-
dc.date.issued	2002-09-02	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1499739	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28526	-
dc.description.abstract	Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of deep levels in As-implanted GaN films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1499739	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	81	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1812	en_US
dc.citation.epage	1814	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000177676200021	-
dc.citation.woscount	8	-
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