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dc.contributor.authorLee, Len_US
dc.contributor.authorLee, WCen_US
dc.contributor.authorChung, HMen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, HYen_US
dc.date.accessioned2014-12-08T15:41:57Z-
dc.date.available2014-12-08T15:41:57Z-
dc.date.issued2002-09-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1499739en_US
dc.identifier.urihttp://hdl.handle.net/11536/28526-
dc.description.abstractHall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of deep levels in As-implanted GaN filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1499739en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume81en_US
dc.citation.issue10en_US
dc.citation.spage1812en_US
dc.citation.epage1814en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000177676200021-
dc.citation.woscount8-
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