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dc.contributor.authorHsieh, CCen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:41:57Z-
dc.date.available2014-12-08T15:41:57Z-
dc.date.issued2002-09-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1499522en_US
dc.identifier.urihttp://hdl.handle.net/11536/28527-
dc.description.abstractSingle phase TiO2 thin films, of either rutile or anatase structure, have been prepared on SrTiO3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO2(00l) films were formed even when a rutile TiO2(110) substrate was used as a target. On the other hand, pure rutile TiO2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700 degreesC. The optimized deposition conditions for preparing TiN and TiO2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMonophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1499522en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume92en_US
dc.citation.issue5en_US
dc.citation.spage2518en_US
dc.citation.epage2523en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000177548500047-
dc.citation.woscount25-
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