完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, CC | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:41:57Z | - |
dc.date.available | 2014-12-08T15:41:57Z | - |
dc.date.issued | 2002-09-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1499522 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28527 | - |
dc.description.abstract | Single phase TiO2 thin films, of either rutile or anatase structure, have been prepared on SrTiO3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO2(00l) films were formed even when a rutile TiO2(110) substrate was used as a target. On the other hand, pure rutile TiO2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700 degreesC. The optimized deposition conditions for preparing TiN and TiO2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed. (C) 2002 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Monophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1499522 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 92 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 2518 | en_US |
dc.citation.epage | 2523 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000177548500047 | - |
dc.citation.woscount | 25 | - |
顯示於類別: | 期刊論文 |