Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

標題:	Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
作者:	Chang, TY Lei, TF Chao, TS Chen, SW Kao, LM Chen, SK Tuan, A Su, TP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	gate oxide integrity (GOI);Co-salicide;fluorine and nitrogen implantation;leakage performance;breakdown charge and stress induce leakage current (SILC)
公開日期:	1-八月-2002
摘要:	In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0038-1101(02)00048-5 http://hdl.handle.net/11536/28603
ISSN:	0038-1101
DOI:	10.1016/S0038-1101(02)00048-5
期刊:	SOLID-STATE ELECTRONICS
Volume:	46
Issue:	8
起始頁:	1097
結束頁:	1101
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。