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dc.contributor.authorChen, YSen_US
dc.contributor.authorMeng, HFen_US
dc.date.accessioned2019-04-03T06:39:54Z-
dc.date.available2019-04-03T06:39:54Z-
dc.date.issued2002-07-15en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.66.035202en_US
dc.identifier.urihttp://hdl.handle.net/11536/28661-
dc.description.abstractBy calculating the phase shifts of the wave functions for the extended scattering states within tight-binding model for a poly (p-phenylene vinylene) chain with one conjugation defect, we obtain the exact transmission probability through the defect as a function of the carrier incident energy for the entire eight pi bands. Cis-defect, sp(3) saturation, and oxidation are considered. The transmission increases rapidly from zero with the carrier kinetic energy, implying the conjugation breaks do not severely limit the intrachain charge transport under high electric field. Assuming an average conjugation length of 100 Angstrom separated by cis-defects, the drift velocity is predicted to be as high as 10(3) m/s for field at 10(7) V/m, and over 10(5) m/s at 10(8) V/m.en_US
dc.language.isoen_USen_US
dc.titleIntrachain carrier transport in conjugated polymer with structural and chemical defectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.66.035202en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume66en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000177338500056en_US
dc.citation.woscount18en_US
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