1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, TYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorWen, HCen_US
dc.contributor.authorChen, HWen_US
dc.date.accessioned2014-12-08T15:42:14Z-
dc.date.available2014-12-08T15:42:14Z-
dc.date.issued2002-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2002.1015208en_US
dc.identifier.urihttp://hdl.handle.net/11536/28684-
dc.description.abstractThis study describes a novel technique to form low temperature oxide (<350 &DEG;C). Low-temperature oxides were formed by N2O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.en_US
dc.language.isoen_USen_US
dc.subjectlow-temperature oxideen_US
dc.subjectmetal gateen_US
dc.subjectN2O/CF4 plasmaen_US
dc.subjectTDDB and GOIen_US
dc.titleImprovement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2002.1015208en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume23en_US
dc.citation.issue7en_US
dc.citation.spage389en_US
dc.citation.epage391en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176491000005-
dc.citation.woscount4-
Appears in Collections:Articles


Files in This Item:

  1. 000176491000005.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...