Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process

doi:10.1109/LED.2002.1015208

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, TY	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Wen, HC	en_US
dc.contributor.author	Chen, HW	en_US
dc.date.accessioned	2014-12-08T15:42:14Z	-
dc.date.available	2014-12-08T15:42:14Z	-
dc.date.issued	2002-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2002.1015208	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28684	-
dc.description.abstract	This study describes a novel technique to form low temperature oxide (<350 &DEG;C). Low-temperature oxides were formed by N2O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.	en_US
dc.language.iso	en_US	en_US
dc.subject	low-temperature oxide	en_US
dc.subject	metal gate	en_US
dc.subject	N2O/CF4 plasma	en_US
dc.subject	TDDB and GOI	en_US
dc.title	Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2002.1015208	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	7	en_US
dc.citation.spage	389	en_US
dc.citation.epage	391	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000176491000005	-
dc.citation.woscount	4	-
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