完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, SJ | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.date.accessioned | 2014-12-08T15:42:18Z | - |
dc.date.available | 2014-12-08T15:42:18Z | - |
dc.date.issued | 2002-06-03 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.1481534 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28728 | - |
dc.description.abstract | Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression rho(T)=rho(0)+AT(2)e((-Delta/T)) over the range of 5-350 K with Delta=94 K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T-3/2 law and the slope suggests a critical wavelength of lambda(Delta)similar to 30.6 A beyond which spin-flip scattering becomes important. (C) 2002 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1481534 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 80 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.spage | 4202 | en_US |
dc.citation.epage | 4204 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000175771800040 | - |
dc.citation.woscount | 13 | - |
顯示於類別: | 期刊論文 |