標題: | Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor |
作者: | Lin, HC Wang, MF Hou, FJ Liu, JT Huang, TY Sze, SM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Schottky barrier;ambipolar;silicon-on-insulator (SOI);silicide;electrical junction |
公開日期: | 1-六月-2002 |
摘要: | A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated, The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (similar to 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10(9)) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor(CMOS)-like devices. |
URI: | http://dx.doi.org/10.1143/JJAP.41.L626 http://hdl.handle.net/11536/28747 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.41.L626 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 41 |
Issue: | 6A |
起始頁: | L626 |
結束頁: | L628 |
顯示於類別: | 期刊論文 |