標題: Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
作者: Lin, HC
Wang, MF
Hou, FJ
Liu, JT
Huang, TY
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Schottky barrier;ambipolar;silicon-on-insulator (SOI);silicide;electrical junction
公開日期: 1-六月-2002
摘要: A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated, The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (similar to 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10(9)) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor(CMOS)-like devices.
URI: http://dx.doi.org/10.1143/JJAP.41.L626
http://hdl.handle.net/11536/28747
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.L626
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 41
Issue: 6A
起始頁: L626
結束頁: L628
顯示於類別:期刊論文


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