標題: Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
作者: Lin, HC
Wang, MF
Lu, CY
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Schottky barrier;silicon-on-insulator;field-induced drain;negative differential conductance
公開日期: 1-二月-2003
摘要: A novel Schottky barrier silicon-on-insulator metal-oxide-semiconductor field-effect transistor featuring metallic source/drain and an electrical drain junction has been fabricated and characterized. The formation of electrical drain junction, or the field-induced drain (FID), is controlled by a metal field-plate overlying the passivation oxide. Excellent ambipolar operation is demonstrated on the device. Specifically, on/off current ratios up to 10(8) and 10(7) are observed for p- and n-channel operations, respectively. Meanwhile, the off-state leakage current shows very weak dependence on the voltage difference between the main-gate and the drain, highlighting the effectiveness of FID. Finally, negative differential conductance effect is observed for n-channel operation, which is identified as due to dynamic hot electron trapping during device characterization. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(02)00202-2
http://hdl.handle.net/11536/28140
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(02)00202-2
期刊: SOLID-STATE ELECTRONICS
Volume: 47
Issue: 2
起始頁: 247
結束頁: 251
顯示於類別:會議論文


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