標題: | Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors |
作者: | Lin, HC Wang, MF Lu, CY Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Schottky barrier;silicon-on-insulator;field-induced drain;negative differential conductance |
公開日期: | 1-二月-2003 |
摘要: | A novel Schottky barrier silicon-on-insulator metal-oxide-semiconductor field-effect transistor featuring metallic source/drain and an electrical drain junction has been fabricated and characterized. The formation of electrical drain junction, or the field-induced drain (FID), is controlled by a metal field-plate overlying the passivation oxide. Excellent ambipolar operation is demonstrated on the device. Specifically, on/off current ratios up to 10(8) and 10(7) are observed for p- and n-channel operations, respectively. Meanwhile, the off-state leakage current shows very weak dependence on the voltage difference between the main-gate and the drain, highlighting the effectiveness of FID. Finally, negative differential conductance effect is observed for n-channel operation, which is identified as due to dynamic hot electron trapping during device characterization. (C) 2002 Elsevier Science Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0038-1101(02)00202-2 http://hdl.handle.net/11536/28140 |
ISSN: | 0038-1101 |
DOI: | 10.1016/S0038-1101(02)00202-2 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 47 |
Issue: | 2 |
起始頁: | 247 |
結束頁: | 251 |
顯示於類別: | 會議論文 |