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dc.contributor.authorLin, CMen_US
dc.contributor.authorLoong, WAen_US
dc.date.accessioned2014-12-08T15:42:22Z-
dc.date.available2014-12-08T15:42:22Z-
dc.date.issued2002-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.4037en_US
dc.identifier.urihttp://hdl.handle.net/11536/28774-
dc.description.abstractWhen the compositions of Al2O3. SiO2., and other oxides were increased, refractive index (n) appeared to increase and extinction coefficient (k) to decrease in AlSixOy. The study of the correlation among sputtering conditions, chemical compositions and optical properties could lead to the chemical stability of AlSixOy embedded material. Bi layer AlSixOy thin film may be a new high-transmittance (T% similar to 35%) embedded layer of attenuated phase-shifting masks (AttPSMs) in 193 nm lithography, The transparent layer with saturation of Al2O3 and SiO2 compositions exhibits n of 2.3-2.4 and k of 0.1-0.2. The absorptive layer with higher concentrations of Al and Si exhibits n of 1.5-1.7 and k of 0.3-0.4. Combining a dark-tone mask, high-transmittance AttPSM and negative resist resulted in better contrast of the aerial image and a resolution of 0.1 mum for the contact-hole pattern in 193 nm lithography, A 0.20-mum-line/space (1: 1) etched pattern was successfully fabricated using AlSixOy, as an embedded layer.en_US
dc.language.isoen_USen_US
dc.subjectchemical stabilityen_US
dc.subjectsputtering conditionen_US
dc.subjectattenuated phase-shifting masken_US
dc.subjectdark toneen_US
dc.subjectside lobeen_US
dc.subjectchemically amplified resisten_US
dc.subjecthigh transmittanceen_US
dc.titleChemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithographyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.41.4037en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue6Ben_US
dc.citation.spage4037en_US
dc.citation.epage4041en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000177169700003-
Appears in Collections:Conferences Paper


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