标题: | Stacked-NMOS triggered silicon-controlled rectifier for ESD protection in high/low-voltage-tolerant I/O interface |
作者: | Ker, MD Chuang, CH 电机学院 College of Electrical and Computer Engineering |
关键字: | electrostatic discharge (ESD);ESD protection;mixed-voltage I/O buffer;silicon-controlled rectifier (SCR) |
公开日期: | 1-六月-2002 |
摘要: | A stacked-NMOS triggered silicon-controlled rectifier (SNTSCR) is proposed as the electrostatic discharge (ESD) clamp device to protect the mixed-voltage I/O buffers of CMOS ICs. This SNTSCR device is fully compatible to general CMOS processes without using the thick gate oxide to overcome the gate-oxide reliability issue. ESD robustness of the proposed SNTSCR device with different layout parameters has been investigated in a 0.35-mum CMOS process. The HBM ESD level of the mixed-voltage I/O buffer with the stacked-NMOS channel width of 120 mum can be obviously improved from the original similar to2 kV to be greater than 8 kV by this SNTSCR device with a device dimension of only 60 mum/0.35 mum. |
URI: | http://dx.doi.org/10.1109/LED.2002.1004236 http://hdl.handle.net/11536/28779 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2002.1004236 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 23 |
Issue: | 6 |
起始页: | 363 |
结束页: | 365 |
显示于类别: | Articles |
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