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dc.contributor.authorCha, TSen_US
dc.date.accessioned2014-12-08T15:42:27Z-
dc.date.available2014-12-08T15:42:27Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.2904en_US
dc.identifier.urihttp://hdl.handle.net/11536/28834-
dc.description.abstractThickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0-5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O-2.en_US
dc.language.isoen_USen_US
dc.subjectoxideen_US
dc.subjectsubthreshold swingen_US
dc.subjectN2Oen_US
dc.subjectthicknessen_US
dc.titleDetermination of ultrathin oxide thickness by subthreshold swingen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.2904en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue5Aen_US
dc.citation.spage2904en_US
dc.citation.epage2905en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000176515700022-
dc.citation.woscount0-
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