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dc.contributor.authorWu, CCen_US
dc.contributor.authorLin, CJen_US
dc.date.accessioned2014-12-08T15:42:27Z-
dc.date.available2014-12-08T15:42:27Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(02)00504-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/28837-
dc.description.abstractThe free-carrier absorption in ultrathin wires fabricated from III-V semiconductors such as n-type InSb has been investigated for the case where the electrons are scattered either by polar optical phonons or acoustic phonons. We study the interaction of longitudinal polar optical phonons with electrons and have neglected the interaction between electrons and transverse optical phonons in solids. The energy band of electrons in semiconductors is assumed to be nonparabolic. The scattering mechanisms of the interaction between electrons and phonons we consider here come from (a) electron-polar-optical-phonon scattering, (b) electron-acoustic-phonon scattering, and (c) piezoelectric scattering in semiconductors. Results are shown that the free-carrier absorption coefficient for the deformation-potential coupling is much larger than that for the piezoelectric coupling. It is also shown that the free-carrier absorption coefficient for the electron-polar-optical-phonon scattering is smaller than that for the electron-acoustic-phonon scattering. However, the free-carrier absorption coefficient increases quite slowly with the photon frequency for the electron-acoustic-phonon scattering. This is not the same result as that for the quasi-two-dimensional semiconducting structures. (C) 2002 Published by Elsevier Science B.V.en_US
dc.language.isoen_USen_US
dc.subjectsemiconducting wiresen_US
dc.subjectpolar optical phononsen_US
dc.subjectacoustic phononsen_US
dc.titleEffect of electron-phonon scattering mechanisms on free-carrier absorption in quasi-one-dimensional structuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4526(02)00504-5en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume316en_US
dc.citation.issueen_US
dc.citation.spage346en_US
dc.citation.epage349en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176297400084-
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