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dc.contributor.authorChen, SYen_US
dc.contributor.authorSun, CLen_US
dc.contributor.authorChen, SBen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:42:29Z-
dc.date.available2014-12-08T15:42:29Z-
dc.date.issued2002-04-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1471937en_US
dc.identifier.urihttp://hdl.handle.net/11536/28855-
dc.description.abstractWe have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied +/-10 V bias. However, the leakage current of BLT on Al2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1471937en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume80en_US
dc.citation.issue17en_US
dc.citation.spage3168en_US
dc.citation.epage3170en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000175144300046-
dc.citation.woscount26-
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