Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

標題:	Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application
作者:	Chen, SY Sun, CL Chen, SB Chin, A 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
公開日期:	29-四月-2002
摘要:	We have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied +/-10 V bias. However, the leakage current of BLT on Al2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. (C) 2002 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.1471937 http://hdl.handle.net/11536/28855
ISSN:	0003-6951
DOI:	10.1063/1.1471937
期刊:	APPLIED PHYSICS LETTERS
Volume:	80
Issue:	17
起始頁:	3168
結束頁:	3170
顯示於類別：	期刊論文

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