SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films.

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chiu, HT	en_US
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Wang, LS	en_US
dc.contributor.author	Peng, CW	en_US
dc.contributor.author	Lee, CY	en_US
dc.date.accessioned	2014-12-08T15:42:30Z	-
dc.date.available	2014-12-08T15:42:30Z	-
dc.date.issued	2002-04-07	en_US
dc.identifier.issn	0065-7727	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28864	-
dc.language.iso	en_US	en_US
dc.title	SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films.	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY	en_US
dc.citation.volume	223	en_US
dc.citation.issue		en_US
dc.citation.spage	A48	en_US
dc.citation.epage	A48	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000176296800285	-
dc.citation.woscount	0	-
Appears in Collections:	Articles