Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

Abstract

This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet etching. A mixture of H2SO4 and H3PO4 was used as an etching solution. SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM images show the flat, smooth surface without any pits or hillocks. After the chemical etching, hexagonal shaped etch pits were observed at the edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the "window" region and the coalescent line of two growing fronts. In contrast, the overgrowth region was nearly free of etch pits. Moreover, we observed that different sizes of etch pits dominated in "window" region and coalescent region. This implied different types dislocations dominated in these regions. (C) 2002 Elsevier Science Ltd. All rights reserved.