統計資料
總造訪次數
| 檢視 | |
|---|---|
| Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage | 112 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage | 0 | 0 | 1 | 0 | 3 | 3 | 0 |
檔案下載
| 檢視 | |
|---|---|
| 000175703200027.pdf | 6 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 100 |
| 美國 | 11 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Menlo Park | 4 |
| Shanghai | 4 |
| Edmond | 2 |
| Ashburn | 1 |
| Kensington | 1 |
| Kirksville | 1 |
| San Diego | 1 |
| University Park | 1 |