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dc.contributor.authorDimitrov, DZen_US
dc.contributor.authorLu, YHen_US
dc.contributor.authorTseng, MRen_US
dc.contributor.authorHsu, WCen_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:42:40Z-
dc.date.available2014-12-08T15:42:40Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.1656en_US
dc.identifier.urihttp://hdl.handle.net/11536/28958-
dc.description.abstractNitrogen and oxygen co-doped GeSbTe films for phase-change optical recording are investigated. It is found that optical properties of amorphous and crystalline state are similar to that of GeSbTe, crystallization temperature increases and crystalline microstructure is refined which indicate a nucleation rate increases by co-doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 dB and 35 dB, respectively, by using an appropriate co-doping concentration in the recording layer.en_US
dc.language.isoen_USen_US
dc.subjectGeSbTe recording layeren_US
dc.subjectoxygen and nitrogen dopingen_US
dc.subjectoptical constantsen_US
dc.subjectmicrostructureen_US
dc.subjectcrystallization temperaturesen_US
dc.subjectphase-change optical disksen_US
dc.titleOxygen and nitrogen co-doped GeSbTe thin films for phase-change optical recordingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.41.1656en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue3Ben_US
dc.citation.spage1656en_US
dc.citation.epage1659en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000176451600011-
Appears in Collections:Conferences Paper


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