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dc.contributor.authorChen, JMen_US
dc.contributor.authorWei, CHen_US
dc.date.accessioned2014-12-08T15:42:46Z-
dc.date.available2014-12-08T15:42:46Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0916-8532en_US
dc.identifier.urihttp://hdl.handle.net/11536/28985-
dc.description.abstractThis paper presents a high-throughput VLSI architecture for LZFG data compression and decompression, To reduce the hardware cost and maintain both of the interior node and the leaf node numbering systems, we modify the original LZFG data structure. Compared to the original LZFG tree, the number of characters in our modified LZFG data structure must be greater than one to establish one new interior node down the root node (<^>) into the new node. Meanwhile, this architecture employs a series of encoding cells with content addressable memory (CAM) to search the longest match and maintain the LZFG data tree during the encoding and decoding processes. By using the parallel design, the compressor and decompressor can keep a constant high bit rate to encode and decode one character per clock cycle, that is, it is directly proportional to the operating clock rate, but independent of the sizes of the word dictionary and the input file. By using 0.25 mum CMOS silicon technology, the operating clock rate can be as high as 85 MHz. Some untargeted encoding cells will be disabled to reduce the power consumption during the comparison operation. Therefore, this architecture can be easily applied in the high-speed real-time communication and data storage systems.en_US
dc.language.isoen_USen_US
dc.subjectLZFGen_US
dc.subjectLZ78en_US
dc.subjectZiv-Lempelen_US
dc.subjectdata compressionen_US
dc.subjectCAMen_US
dc.titleA high-throughput VLSI architecture for LZFG data compressionen_US
dc.typeArticleen_US
dc.identifier.journalIEICE TRANSACTIONS ON INFORMATION AND SYSTEMSen_US
dc.citation.volumeE85Den_US
dc.citation.issue3en_US
dc.citation.spage497en_US
dc.citation.epage509en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174258300006-
dc.citation.woscount0-
Appears in Collections:Articles