標題: Effective strategy for porous organosilicate to suppress oxygen ashing damage
作者: Liu, PT
Chang, TC
Mor, YS
Chen, CW
Tsai, TM
Chu, CJ
Pan, FM
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-2002
摘要: Photoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs), This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation, To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H, plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1445644
http://hdl.handle.net/11536/28990
ISSN: 1099-0062
DOI: 10.1149/1.1445644
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 5
Issue: 3
起始頁: G11
結束頁: G14
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