標題: Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films
作者: Chao, CW
Hu, GR
Wu, YS
Chen, YC
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-二月-2002
摘要: Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530degreesC, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of similar to55degrees from the edge. The direction of the primary grain growth was along [211] and the secondary growth occurred along [011] direction. (C) 2001 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1435562
http://hdl.handle.net/11536/29021
ISSN: 1099-0062
DOI: 10.1149/1.1435562
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 5
Issue: 2
起始頁: C31
結束頁: C32
顯示於類別:期刊論文