Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Abstract

Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts.