Selective growth of single InAs quantum dots using strain engineering

標題:	Selective growth of single InAs quantum dots using strain engineering
作者:	Lee, BC Lin, SD Lee, CP Lee, HM Wu, JC Sun, KW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	14-一月-2002
摘要:	A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. (C) 2002 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.1433169 http://hdl.handle.net/11536/29070
ISSN:	0003-6951
DOI:	10.1063/1.1433169
期刊:	APPLIED PHYSICS LETTERS
Volume:	80
Issue:	2
起始頁:	326
結束頁:	328
顯示於類別：	期刊論文

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