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dc.contributor.authorLee, BCen_US
dc.contributor.authorLin, SDen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorLee, HMen_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorSun, KWen_US
dc.date.accessioned2014-12-08T15:42:52Z-
dc.date.available2014-12-08T15:42:52Z-
dc.date.issued2002-01-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1433169en_US
dc.identifier.urihttp://hdl.handle.net/11536/29070-
dc.description.abstractA method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSelective growth of single InAs quantum dots using strain engineeringen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1433169en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume80en_US
dc.citation.issue2en_US
dc.citation.spage326en_US
dc.citation.epage328en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000173153800055-
dc.citation.woscount19-
Appears in Collections:Articles


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