Selective growth of single InAs quantum dots using strain engineering

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DC 欄位	值	語言
dc.contributor.author	Lee, BC	en_US
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Lee, HM	en_US
dc.contributor.author	Wu, JC	en_US
dc.contributor.author	Sun, KW	en_US
dc.date.accessioned	2014-12-08T15:42:52Z	-
dc.date.available	2014-12-08T15:42:52Z	-
dc.date.issued	2002-01-14	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1433169	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29070	-
dc.description.abstract	A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. (C) 2002 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Selective growth of single InAs quantum dots using strain engineering	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1433169	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	80	en_US
dc.citation.issue	2	en_US
dc.citation.spage	326	en_US
dc.citation.epage	328	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000173153800055	-
dc.citation.woscount	19	-
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